Rugged, cool, extended-power performance with world’s most protected GaN power semiconductor in thermally-enhanced TOLT package

Navitas Delivers More Power for AI & EV with Extended GaNSafe? Portfolio

TORRANCE, Calif., Oct. 09, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package.

The GaNSafe family has been specifically created to serve demanding, high-power applications, such as AI data centers, solar/energy storage, and industrial markets. Navitas 4^th generation integrates control, drive, sensing, and critical protection features that enable unprecedented reliability and robustness. GaNSafe is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4-pins, allowing the package to be treated like a discrete GaN FET, requiring no V_CC pin.

The TOLT packaging enhances thermal dissipation through the top side of the package, allowing heat to be dissipated directly to the heatsink (not through the PCBA). This enables the reduction of operating temperature and increases current capability, resulting in the highest level of system power density, efficiency, and reliability.

“With over 200 million units shipped and supplied with a 20-year warranty, Navitas’ highly integrated high-power GaNSafe ICs are proven to deliver performance and reliability while simplifying Design-IN for systems up to 22kW,” says Charles Bailley, Senior Director of Business Development. “As the most protected, reliable, and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW. Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance, efficiency, power density, and reliability in even the most demanding applications.”

Suitable for applications from 1 kW to 22 kW, 650 V GaNSafe in TOLT packaging is available with a range of R_DS(ON)MAX from 25 to 98 m?. Integrated features and functions include:

• High-speed short-circuit protection, with autonomous ‘detect and protect’ with ultra-fast 350 ns / 50 ns latency.

• Protected, regulated, integrated gate-drive control, with zero gate-source loop inductance for reliable high-speed 2 MHz switching capability to maximize application power density.

• Electrostatic discharge (ESD) protection of 2 kV, compared to zero for discrete GaN transistors.

• 650 V continuous, and 800 V transient voltage capability for extraordinary application conditions.

• Integrated Miller Clamp (no negative gate bias, higher 3rd quadrant efficiency)

• Programmable turn-on and turn-off speeds (dV/dt) to simplify EMI regulatory requirements.

• Simple 4-pin device, allowing the package to be treated like a discrete GaN and requiring no additional V_CC pin

• Robust, thermally enhanced packaging: ultra-low R_{Q_JUNC-AMB} and board-level thermal cycling (BLTC) Reliability