SK hynix Signs Investment Agreement of Advanced Chip Packaging with Indiana

In This Article:

  • To build advanced packaging facility for next-generation HBM, while collaborating with Purdue University for R&D

  • Selects Indiana for strong support provided by the state and local government, infrastructure for manufacturing, and talent at Purdue.

  • Industry's first investment in advanced packaging for AI products on American soil, strengthens supply-chain resilience

SEOUL, South Korea, April 3, 2024 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com), the world's leading producer of High-Bandwidth Memory (HBM) chips, announced today that it will invest an estimated $3.87 billion in West Lafayette, Indiana to build an advanced packaging fabrication and R&D facility for AI products. The project, the first of its kind in the United States, is expected to drive innovation in the nation's AI supply chain, while bringing more than a thousand new jobs to the region.

The company held an investment agreement ceremony with officials from Indiana State, Purdue University, and the U.S. government at Purdue University in West Lafayette on the 3rd and officially announced the plan.

At the event, officials from each party including Governor of Indiana Eric Holcomb, Senator Todd Young, Director of the White House Office of Science and Technology Policy Arati Prabhakar, Assistant Secretary of Commerce Arun Venkataraman, Secretary of Commerce State of Indiana David Rosenberg, Purdue University President Mung Chiang, Chairman of Purdue Research Foundation Mitch Daniels, Mayor of city of West Lafayette Erin Easter, Ambassador of the Republic of Korea to the United States Hyundong Cho, Consul General of the Republic of Korea in Chicago Junghan Kim, SK vice chairman Jeong Joon Yu, SK hynix CEO Kwak Noh-Jung and SK hynix Head of Package & Test Choi Woojin, participated.

Leveraging its dominant position in the HBM market, SK hynix's new facility will be home to an advanced semiconductor production line that will mass-produce next-generation HBM, the highest-performing Dynamic Random Access Memory (DRAM) chips, which are the critical components of graphic processing units that train AI systems such as ChatGPT.

* HBM (High Bandwidth Memory): A high-value, high-performance memory that vertically interconnects multiple DRAM chips and dramatically increases data processing speed in comparison with conventional DRAM products. HBM4 is the sixth generation of its kind, following HBM, HBM2, HBM2E, HBM3 and HBM3E.

The company plans to begin mass production in the second half of 2028, while the new facility will also develop future generations of chips and house an advanced packaging R&D line. The site was selected due to Indiana's resilient manufacturing infrastructure and R&D ecosystem, expert intellectuals in the semiconductor field and the talent pipeline at Purdue University, and the strong support provided by the state and local government.